Body Diode of 1.2kV SiC MOSFET: Unipolar and Bipolar Operation

In this work, we investigate the Body Diode (BD) of a 40mOhm, 1.2kV SiC MOSFETs. We performed DC measurements and switching measurements, at Room Temperature (RT) High (HT) (T=175°C), together with TCAD simulation calibration. focused on low side (LS) switch turn-on event, i.e., BD turn-off event. demonstrated that unipolar bipolar can both be achieved different V GS . With =-5V, conducts in mode carriers being injected via pn junction. This is rather well known literature characterized by Negative Coefficient (NTC) F Switching =-5V show strong reverse recovery-temperature dependent caused augmented minority carrier injection high temperature. Unipolar channel conduction =0V it - Positive (PTC). Thanks to nature, no dependent.